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Thyristor RL=30Ω; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;RL=30Ω; MIN MAX UNIT 0.05 0.5 mA 2 1.8 V 80 80 mA 80 2.5 V isc website：www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor NOTICE： ISC reserves the rights to make changes o |
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Inchange Semiconductor |
Triacs ·With D2PAK non insulated package. ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in lig |
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INCHANGE |
Thyristor nt VGT Rth (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =12V;RG=330Ω; Ⅱ RL=6Ω Ⅲ VD =12V;RG=330Ω;RL=6Ω Half cycle MAX 0.1 1.0 3.0 1.8 50 50 50 2.5 0.89 UNIT mA V mA V ℃/W isc website：www.iscsemi.com isc & iscsemi is registered |
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INCHANGE |
Triac ·With TO-263 non insulated package ·Suitables for general purpose AC switching,which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in ligh |
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INCHANGE |
Thyristor Gate-trigger current VGT Gate-trigger voltage Ⅰ VD =12V;RL=60Ω; Ⅱ Ⅲ VD =12V;RL=60Ω; MIN MAX UNIT 0.05 0.5 mA 2 1.6 V 50 50 mA 50 2.5 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconducto |
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INCHANGE |
Triac ·With TO-220AB isolated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light d |
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INCHANGE |
Thyristor e-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base Ⅰ VD =12V;RL=20Ω Ⅱ Ⅲ VD =12V;RL=20Ω Half cycle MIN MAX UNIT 0.05 0.5 mA 2 2.0 V 35 35 mA 35 1.5 V 1.2 ℃/W isc website：www.iscsemi.com isc & iscsemi is |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤900mΩ. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
Triac VD =12V;IT=0.1A; Ⅱ 35 mA Ⅲ 35 VGT Gate-trigger voltage VD =12V;IT=0.1A; 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pres |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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Inchange Semiconductor |
Thyristors er voltage VD =12V;IT=0.1A; MAX 0.01 0.5 2.0 1.6 10 10 10 1.3 UNIT mA V mA V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl |
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INCHANGE |
Thyristor igger current Ⅰ VD =12V;IT=0.1A; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.01 0.5 mA 2 1.6 V 35 35 mA 35 1.3 V 2.4 ℃/W isc website：www.iscsemi.com isc & iscsemi is r |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.43Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
Ultrafast Rectifier ·With TO-247 packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching p |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤820mΩ. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.34Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤55mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mo |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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