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TK10Q60W |
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| Part Number | TK10Q60W |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10Q60W，ITK10Q60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.43Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% ... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.43Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 80 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THE... |
| Document |
 TK10Q60W Data Sheet
PDF 229.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK10Q60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs |
|
| 3 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs |
|
| 5 | TK100A10N1 |
Toshiba |
Silicon N-Channel MOSFET |
|