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IXTQ60N10T |
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| Part Number | IXTQ60N10T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 150 A PD Total Dissipati... |
| Document |
 IXTQ60N10T Data Sheet
PDF 252.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTQ60N10T |
IXYS |
Power MOSFET |
|
| 2 | IXTQ60N20L2 |
IXYS |
Power MOSFET |
|
| 3 | IXTQ60N20L2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTQ60N20T |
IXYS |
Power MOSFET |
|
| 5 | IXTQ60N20T |
INCHANGE |
N-Channel MOSFET |
|