| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon NPN Power Transistor sc Silicon NPN Power Transistor MJB44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation |
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INCHANGE |
NPN Transistor ure Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 24 A 80 W 150 ℃ -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJB13007 iis |
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Inchange Semiconductor |
Silicon NPN Power Transistor itter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=6A; IB= 600mA IC= 6A; VCE=4V VCE= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hF |
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Inchange Semiconductor |
Silicon PNP Power Transistor )CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0 IEBO Emitter Cu |
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INCHANGE |
PNP Transistor nless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitt |
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INCHANGE |
NPN Transistor ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= |
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INCHANGE |
NPN Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-3A; IB= - |
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INCHANGE |
NPN Transistor s otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=3A; IB= 375mA IC= |
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Inchange Semiconductor |
Silicon PNP Power Transistor tor-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-6A; IB= -600mA IC=- 6A; VCE=-4V VCE=-60V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V |
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