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MJB45H11 |
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| Part Number | MJB45H11 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Genera... |
| Features |
)CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0
VCE(sat) VBE(sat)
ICEO
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current
IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -2A; VCE=-1V IC=-4A; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -10V
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
MIN
TYP MAX UNIT
-80
V
-1.0
V
-1.5
V
-10
uA
-50
uA
60 40
40
MHz
230
pF
NOTICE： ISC reserves the rights to make... |
| Document |
 MJB45H11 Data Sheet
PDF 212.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJB45H11 |
ON Semiconductor |
PNP Transistor |
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| 2 | MJB41C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
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| 3 | MJB41C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJB42C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
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| 5 | MJB42C |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|