No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤3.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE M |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATI |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤4.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS( |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE M |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM R |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤3.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM R |
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL |
|