IPD048N06L3 |
Part Number | IPD048N06L3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPD048N06L3,IIPD048N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
Features |
·Static drain-source on-resistance: RDS(on)≤4.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(... |
Document |
IPD048N06L3 Data Sheet
PDF 239.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPD048N06L3 |
Infineon |
Power-Transistor | |
2 | IPD048N06L3G |
Infineon Technologies |
Power-Transistor | |
3 | IPD040N03L |
Infineon |
Power-Transistor | |
4 | IPD040N03LG |
Infineon |
Power-Transistor | |
5 | IPD042P03L3G |
Infineon Technologies |
Power-Transistor |