IPD048N06L3 INCHANGE N-Channel MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IPD048N06L3

INCHANGE
IPD048N06L3
IPD048N06L3 IPD048N06L3
zoom Click to view a larger image
Part Number IPD048N06L3
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor IPD048N06L3,IIPD048N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus...
Features
·Static drain-source on-resistance: RDS(on)≤4.8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High Frequency switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(...

Document Datasheet IPD048N06L3 Data Sheet
PDF 239.49KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IPD048N06L3
Infineon
Power-Transistor Datasheet
2 IPD048N06L3G
Infineon Technologies
Power-Transistor Datasheet
3 IPD040N03L
Infineon
Power-Transistor Datasheet
4 IPD040N03LG
Infineon
Power-Transistor Datasheet
5 IPD042P03L3G
Infineon Technologies
Power-Transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact