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IPD60R1K0CE |
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| Part Number | IPD60R1K0CE |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.8 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 61 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-... |
| Document |
 IPD60R1K0CE Data Sheet
PDF 238.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R1K0CE |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R1K4C6 |
Infineon Technologies |
Power Transistor |
|
| 3 | IPD60R1K4C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD60R1K5CE |
Infineon Technologies |
MOSFET |
|
| 5 | IPD60R1K5CE |
INCHANGE |
N-Channel MOSFET |
|