INCHANGE D44 fiche technique

No.	Partie #	Fabricant	Description
1	D44C1	Inchange Semiconductor	Silicon NPN Power Transistor ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2	AOD446	INCHANGE	N-Channel MOSFET ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
3	D44C10	Inchange Semiconductor	Silicon NPN Power Transistor stance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS M
4	D44VH4	INCHANGE	NPN Transistor to Case 1.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
5	D44T2	INCHANGE	NPN Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICES Collector Cutoff Current VCE= 300V; VBE= 0 I
6	D44H11	INCHANGE	NPN Transistor /W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor D44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
7	D44Q1	INCHANGE	NPN Transistor mi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q1 D44Q3 D44Q5 IC= 10
8	D44C5	Inchange Semiconductor	Silicon NPN Power Transistors ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors D44C5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY
9	D44H10	Inchange Semiconductor	Silicon NPN Power Transistors D44H10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Em
10	D44VH7	INCHANGE	NPN Transistor to Case 1.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
11	D44TD5	INCHANGE	NPN Transistor i.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44TD3 D44TD4 IC= 0.1A ;IB
12	D44T1	INCHANGE	NPN Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICES Collector Cutoff Current VCE= 300V; VBE= 0 I
13	D44Q3	INCHANGE	NPN Transistor mi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q1 D44Q3 D44Q5 IC= 10
14	BD440	INCHANGE	PNP Transistor Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current VCE= -60V; VBE= 0 IEBO
15	AOD442	INCHANGE	N-Channel MOSFET ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·
16	MJD44E3	Inchange Semiconductor	Silicon NPN Power Transistor L PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-EmitterSaturation Voltage VCE(sat)-2 Collector-EmitterSaturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cuto
17	D44C7	Inchange Semiconductor	Silicon NPN Power Transistors ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors D44C7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY
18	D44C4	Inchange Semiconductor	Silicon NPN Transistor scsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification D44C4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturat
19	D44C3	Inchange Semiconductor	Silicon NPN Power Transistor ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors D44C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T
20	D44C2	Inchange Semiconductor	Silicon NPN Power Transistor istance, Junction to Case 4.2 ℃/W D44C2 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN