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D44H11 |
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| Part Number | D44H11 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D45H11 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
D44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 0.8 A
1.5
V
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
60
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
40
... |
| Document |
 D44H11 Data Sheet
PDF 206.74KB |
| Distributor | Stock | Price | Buy |
|---|
