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MJD44E3 |
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| Part Number | MJD44E3 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
L
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-EmitterSaturation Voltage
VCE(sat)-2 Collector-EmitterSaturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
CONDITIONS IC= 30mA; IB= 0 IC= 5A ;IB= 10mA IC= 10A ;IB= 20mA IC= 5A ;IB= 10mA VCE=Rated VCEO; VBE= 0 VEB= 7.0V; IC= 0 IC= 5A ; VCE= 5V
MJD44E3
MIN MAX UNIT
80
V
1.5
V
1.5
V
2.5
V
10
μA
1.0
μA
1000
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time with... |
| Document |
 MJD44E3 Data Sheet
PDF 265.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD44E3 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 2 | MJD44E3 |
ON Semiconductor |
Darlington Power Transistor |
|
| 3 | MJD44E3-1 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 4 | MJD44E3T4 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 5 | MJD44 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|