| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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INCHANGE |
Silicon NPN Power Transistor BO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Cur |
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Inchange Semiconductor |
Silicon NPN Transistor urrent VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 10A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 2A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A , IB1= -IB2= 2A RL= 15Ω; VCC=150V,VBB2=4V 2SC3714 |
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Inchange Semiconductor |
Power Transistor down Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A hFE DC Current Gain IC= 4A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO |
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Inchange Semiconductor |
Silicon NPN Transistor METER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20 |
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Inchange Semiconductor |
Power Transistor n Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A hFE DC Current Gain IC= 2A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emi |
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Inchange Semiconductor |
Power Transistor ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SC3729 MIN TYP. MAX UN |
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Inchange Semiconductor |
Silicon NPN Power Transistor tage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; |
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INCHANGE |
NPN Transistor Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.125A ICBO Collector Cutoff Curre |
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INCHANGE |
NPN Transistor Saturation Voltage IC= 6.0A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V TTC3710B MIN TYP. MAX UNIT 80 |
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INCHANGE |
NPN Transistor Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current |
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INCHANGE |
NPN Transistor n Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A ICBO Collector Cutoff Current VC |
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INCHANGE |
NPN Transistor tor 2SC3725 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Bas |
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INCHANGE |
NPN Transistor ) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.6 V 1.5 V 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 uA hFE DC |
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Inchange Semiconductor |
Silicon NPN Power Transistor TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Satu |
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Inchange Semiconductor |
Silicon NPN Power Transistor (BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V |
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Inchange Semiconductor |
Power Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitte |
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INCHANGE |
NPN Transistor E(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 6A; IB= 0.3A IC= 6A; IB= 0.3A VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= |
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INCHANGE |
NPN Transistor Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 700V ; |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 100 |
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