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INCHANGE |
Silicon NPN Power Transistor s registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vol |
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INCHANGE |
NPN Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 C |
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Inchange Semiconductor |
Silicon NPN Power Transistor ETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A VCE( |
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INCHANGE |
NPN Transistor C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(s |
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Inchange Semiconductor |
Silicon NPN Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1☆ C |
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Inchange Semiconductor |
Silicon NPN Power Transistor ebsite www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; I |
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Inchange Semiconductor |
Silicon NPN Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BUV37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 15mH B 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistor ：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUV82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUV82 400 VCEO(SUS) Collector-E |
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INCHANGE |
NPN Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
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INCHANGE |
NPN Transistor ered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE |
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INCHANGE |
NPN Transistor TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; Ib=0 600 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 VCE(sat) Collector-Emitter Sat |
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Inchange Semiconductor |
Silicon NPN Power Transistor Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltag |
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Inchange Semiconductor |
Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV39 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; |
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Inchange Semiconductor |
Silicon NPN Power Transistor LECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV41 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; |
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Inchange Semiconductor |
Silicon NPN Power Transistor RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VCE(sa |
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Inchange Semiconductor |
Silicon NPN Power Transistors isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor or-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO |
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Inchange Semiconductor |
Silicon NPN Power Transistor ETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A VCE( |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Curre |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter |
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