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BUV70 |
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| Part Number | BUV70 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
TRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; Ib=0
600
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 9A; IB= 3A
VCE= 1300V; VBE= 0 VCE= 1200V; VBE= 0; TC=125℃
IC= 3.2A; VCE= 2V
5
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
7
hFE-3
DC Current Gain
IC= 6A; VCE= 2V
5
BUV70
MAX UNIT
V
V
1.8
V
2.0
V
1.0 2... |
| Document |
 BUV70 Data Sheet
PDF 214.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV70 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 2 | BUV10 |
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| 3 | BUV10N |
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| 4 | BUV11 |
Motorola Inc |
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| 5 | BUV11 |
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