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INCHANGE |
NPN Transistor reakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE |
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INCHANGE |
SOT-143 Silicon NPN RF Transistor lector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.5 pF Ce Emitter capac |
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INCHANGE |
NPN Transistor TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 100 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA |
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INCHANGE |
NPN Transistor lector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.3 pF Ce Emitter capac |
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INCHANGE |
NPN Transistor reakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1MHz 9 GHz Cre Feedback Capacitance IE |
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INCHANGE |
SOT-343R NPN Transistor llector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.5 pF Ce Emitter capa |
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INCHANGE |
NPN Transistor Current Gain IC= 25mA ; VCE= 2V fT Transition frequency IC= 25mA ; VCE= 2V; f= 2GHz NF Noise Figure NF Noise Figure ︱S21e︱2 Insertion Power Gain IC= 2mA ; VCE= 2V; f= 900MHz IC= 2mA ; VCE= 2V; f= 2GHz IC= 30mA ; VCE= 8V; f= 2GHz 4.5 V 10 |
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