Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BFG425W |
Click to view a larger image
| Part Number | BFG425W |
| Manufacturer | INCHANGE |
| Description | ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideba... |
| Features |
Current Gain
IC= 25mA ; VCE= 2V
fT
Transition frequency
IC= 25mA ; VCE= 2V; f= 2GHz
NF
Noise Figure
NF
Noise Figure
︱S21e︱2 Insertion Power Gain
IC= 2mA ; VCE= 2V; f= 900MHz IC= 2mA ; VCE= 2V; f= 2GHz IC= 30mA ; VCE= 8V; f= 2GHz
4.5
V
100 nA 50 100 150
25
GHz
0.8
dB
1.2
dB
17
dB
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon NPN RF Transistor
BFG425W
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the ... |
| Document |
 BFG425W Data Sheet
PDF 205.97KB |
| Distributor | Stock | Price | Buy |
|---|
