| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
TO-252 Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5 V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta= |
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INCHANGE |
TO-220C Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.0A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM |
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INCHANGE |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER RATING UNIT Vi DC input voltage 35 V Io Output curren |
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INCHANGE |
NPN Transistor e Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 0.1 μA |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1 A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUT |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1 A ·Output voltage of 5 V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLU |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLU |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLU |
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INCHANGE |
Silicon NPN Power Transistor llector-Emitter Saturation Voltage IC=800mA; IB= 80mA VBE(sat) base-emitter saturation voltage IC= 800mA; IB=80mA ICBO collector cut-off current I CEO collector cut-off current VCB =40 V,IE = 0 VCE= 20V, IB=0 IEBO Emitter Cutoff Current VEB=5 |
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INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconducto |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.52Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.0A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLU |
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Inchange Semiconductor |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.0A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLU |
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Inchange Semiconductor |
Power Transistor r-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7A;IB=-0.7A |
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Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= |
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Inchange Semiconductor |
2SA1805 lector-emitter saturation voltage IC=-7A;IB=-0.7A VBE Base-emitter voltage IC=-5A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V hFE-2 DC current g |
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INCHANGE |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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