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2SD1805 |
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| Part Number | 2SD1805 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High current capacity ·Small and slim package making it easy to make 2SD1805-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to... |
| Features |
TICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 60mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE2
DC Current Gain
IC= 3A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MH... |
| Document |
 2SD1805 Data Sheet
PDF 228.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD180 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD1800 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 3 | 2SD1801 |
ON Semiconductor |
Bipolar Transistor |
|
| 4 | 2SD1801 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1801 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|