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SS8050 |
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| Part Number | SS8050 |
| Manufacturer | INCHANGE |
| Description | ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VE... |
| Features |
llector-Emitter Saturation Voltage IC=800mA; IB= 80mA
VBE(sat) base-emitter saturation voltage
IC= 800mA; IB=80mA
ICBO collector cut-off current
I
CEO
collector cut-off current
VCB =40 V,IE = 0 VCE= 20V, IB=0
IEBO Emitter Cutoff Current
VEB=5V; IC=0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 1V
hFE-2
DC Current Gain
fT Transition frequency
IC=0.8A ; VCE= 1V VCE=10V, IC= 50mA，f=30MHz
MIN MAX UNIT 40 V 25 V 5V
0.5 V 1.2 V 0.1 uA 0.1 uA 0.1 uA 120 400 40 100 MHz
Classification of hFE-1
Rank Range
L 120-200
H 200-350
J 300-400
isc website：www.iscsemi.com
2 isc & iscsemi is registe... |
| Document |
 SS8050 Data Sheet
PDF 54.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SS8050 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 2 | SS8050 |
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| 3 | SS8050 |
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NPN Epitaxial Silicon Transistor |
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| 4 | SS8050 |
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| 5 | SS8050 |
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