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INCHANGE |
NPN Transistor HARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage |
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INCHANGE |
NPN Transistor Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 900V; IE= 0 IEBO Emitter Cuto |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.94Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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INCHANGE |
P-Channel MOSFET ·With TO-252( DPAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor |
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INCHANGE |
Schottky Rectifier ·Low Forward Voltage Drop ·High Frequency Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are in high current switching power supplies, plating power supplies, UPS systems, con |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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INCHANGE |
NPN Transistor (BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V VECF C-E Diode Forward Voltage IF= 4A |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ource On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK1409 MIN TYP MAX UNIT 450 V 2.0 3.0 4.0 V 0.25 Ω ±100 nA 500 uA Notice： ISC reser |
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INCHANGE |
P-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power sup |
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INCHANGE |
P-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor AOI409 ·APPLICATIONS ·Power supply ·DC-DC converters · |
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INCHANGE |
Thyristor olding current ITM=50mA MIN 600 600 4 20 0.2 125 -40 to + 150 UNIT V V A A W ℃ MIN MAX UNIT 5 500 μA 5 500 μA 2.0 V 10 μA 1.3 V 10 mA isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Notice： ISC reserves the rights |
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INCHANGE |
NPN Transistor ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V VCE(sat) Collector-Emitt |
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INCHANGE |
P-Channel MOSFET ·Drain Current –ID= -31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 38mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITI |
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INCHANGE |
P-Channel MOSFET ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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