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TTD1409B |
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| Part Number | TTD1409B |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min) ·High DC Current Gain— : hFE = 600(Min) @ IC= 2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
ERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
20
uA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
600
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
100
COB
Output Capacitance
... |
| Document |
 TTD1409B Data Sheet
PDF 197.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TTD1410 |
INCHANGE |
NPN Transistor |
|
| 2 | TTD1415 |
INCHANGE |
NPN Transistor |
|
| 3 | TTD1415B |
Toshiba |
Silicon NPN Transistor |
|
| 4 | TTD1415B |
Inchange |
Silicon NPN Power Transistor |
|
| 5 | TTD120N03AT |
Unigroup |
30V N-Channel MOSFET |
|