2SD1409 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1409

INCHANGE
2SD1409
2SD1409 2SD1409
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Part Number 2SD1409
Manufacturer INCHANGE
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
Features (BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V VECF C-E Diode Forward Voltage IF= 4A 3.0 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 600 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 100 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 35 pF Switching times ton Turn-on Time tstg Storage Time tf Fall T...

Document Datasheet 2SD1409 Data Sheet
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