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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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Inchange Semiconductor |
Silicon PNP Power Transistor Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitte |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications FD |
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Inchange Semiconductor |
(2N5038 / 2N5039) Silicon NPN Power Transistors PN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VC |
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INCHANGE |
NPN Transistor ademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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INCHANGE |
NPN Transistor ) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V 40 150 fT Current-Gain—Ban |
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Inchange Semiconductor |
Silicon PNP Power Transistor t) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain |
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INCHANGE |
NPN Transistor k isc Silicon NPN Power Transistors 2N5655 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 50mH 250 V V(BR)CEO Collect |
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INCHANGE |
NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 100mA ; L= 50mH 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= |
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INCHANGE |
PNP Power Transistor ) Base-Emitter Saturation Voltage IC= -25.0A; IB= -6.25A VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -4V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= - |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon PNP Power Transistor on Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 175V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 4V; IC= 0 IC= 50mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V MIN TYP. MAX UNIT 0.5 V 50 μA 2 |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
Silicon NPN Power Transistor ) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V 40 150 fT Current-Gain—Ban |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cuto |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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