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2N5109 |
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| Part Number | 2N5109 |
| Manufacturer | INCHANGE |
| Description | ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable o... |
| Features |
) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA
0.5
V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 10mA; VCE= 10V
40
150
fT
Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200
MHz
COB
Output Capacitance
IE= 0;VCB= 28V; ftest= 1.0MHz
3.3 pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products a... |
| Document |
 2N5109 Data Sheet
PDF 183.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5102 |
RCA Solid State |
RF Power Devices |
|
| 2 | 2N5108 |
Advanced Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N5108 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | 2N5108 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 5 | 2N5109 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|