2N5401 |
Part Number | 2N5401 |
Manufacturer | Inchange Semiconductor |
Description | ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5551. isc Product Specification 2N5401 APPLICATIONS ·Designed for Switching and amplification in ... |
Features |
Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain
IC= 10mA; IB= 1mA
IC= 50mA; IB= 5mA VCB= 120V; IE= 0 VCB= 120V; IE= 0 Ta = 100 ℃ VEB= 4V; IC= 0
IC= 1mA ; VCE= 5V
hFE DC Current Gain
IC= 10mA ; VCE= 5V
hFE DC Current Gain
IC= 50mA ; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V
MIN TYP. MAX UNIT -0.15 V -0.2 V -1.0 V -1.0 V -50 nA -50 uA... |
Document |
2N5401 Data Sheet
PDF 122.57KB |
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