| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SK1808 • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Dra |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1809 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dr |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1838(L), 2SK1838(S) Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sour |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1862, 2SK1863 Absolute Maximum Ratings (Ta = 25°C) Item Drai |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1807 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1838(L), 2SK1838(S) Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1862, 2SK1863 Absolute Maximum Ratings (Ta = 25°C) Item Drai |
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Hitachi Semiconductor |
2SK1835 • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) It |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratin |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratin |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1838(L), 2SK1838(S) Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolu |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolu |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolu |
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