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2SK1859 |
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| Part Number | 2SK1859 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching reg... |
| Features |
• • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 6 15 6 60 150 –55 to +150 Unit V V A A A W °C °... |
| Document |
 2SK1859 Data Sheet
PDF 33.02KB |
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