| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SC2611 current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collecto |
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Hitachi Semiconductor |
Silicon NPN Transistor or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characte |
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Hitachi Semiconductor |
2SC2612 7 — — — — — — — — — — — — — 1.2 — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = –IB2 = 0.6 A VBE = –5 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE |
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Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob 2 2SC2610 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 800 Collector Current IC (mA) 1.0 Typical Outp |
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Hitachi Semiconductor |
Silicon NPN Transistor 1 I C = 5 A, IB1 = –IB2 = 1 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100 100 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE1 hFE |
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Hitachi Semiconductor |
Silicon NPN Transistor ltage Gain bandwidth product Collector output capacitance Note: Grade Mark hFE B QB 60 to 120 C QC 100 to 200 V(BR)EBO I CBO I EBO hFE* 60 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VC |
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Hitachi Semiconductor |
Silicon NPN Transistor A*1 I C = 3 A, IB1 = –IB2 = 0.6 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100 100 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE |
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Hitachi Semiconductor |
Silicon NPN Transistor r saturation voltage Base to emitter voltage Note: Grade Mark hFE1 VCE(sat) VBE 60 10 — — V V I C = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test) 1. The 2SC2618 is grouped by h FE1 as follows. B RB 60 to 120 C RC 100 to 200 D |
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Hitachi Semiconductor |
Silicon NPN Transistor ain bandwidth product Collector output capacitance Noise figure Note: Grade Mark hFE V(BR)EBO I CBO I EBO hFE* 35 — — — — — VCE(sat) VBE fT Cob NF V V MHz pF dB I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0 |
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