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2SC2612 |
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| Part Number | 2SC2612 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 2... |
| Features |
A*1 I C = 3 A, IB1 = –IB2 = 0.6 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100 100 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 45 Collector power dissipation PC (W) Area of Safe Operation 10 iC(peak) ICmax(Continuous) Collector current IC (A) 1.0 µs 25 µs µs 50 s 0 ... |
| Document |
 2SC2612 Data Sheet
PDF 39.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC2610 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC2611 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2611 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2611 |
SavantIC |
SILICON POWER TRANSISTOR |
|