| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dr |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp d |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dr |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lam |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dr |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lam |
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Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absol |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dri |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Dr |
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