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4AK20 |
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| Part Number | 4AK20 |
| Manufacturer | Hitachi Semiconductor |
| Description | 4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capab... |
| Features |
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver • Discrete packaged devices of same die: 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode ... |
| Document |
 4AK20 Data Sheet
PDF 36.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4AK21 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 2 | 4AK22 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 3 | 4AK23 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 4 | 4AK25 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 5 | 4AK26 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|