No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G |
|
|
|
Hitachi Semiconductor |
UHF / VHF RF Amplifier • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “ZR-”. 3SK317 Absolute Maximum Ra |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual-Gate MOSFET • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage |
|
|
|
Hitachi Semiconductor |
UHF RF Amplifier • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB –”. 3SK319 Absolute |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gat |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, VG2S = VDS = 0 VG2S = ±8 V, VG1S = VDS = 0 VDS = 6 V, VG2S = 3V, I D = 100 µA VDS = 6 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, VG1S = 0 VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET 0 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA, VG1S = VG2S = –5 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, V G2S = VDS = 0 VG2S = ±8 V, V G1S = VDS = 0 VDS = 10 V, VG2S = 3 V, I D = |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Transistor • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source |
|
|
|
Hitachi Semiconductor |
UHF RF Amplifier • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB –”. 3SK318 Absolut |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) It |
|
|
|
Hitachi Semiconductor |
Silicon NPN Triple Diffused 10 µA, VG2S = VDS = 0 I G2 = –10 µA, VG1S = VDS = 0 VG1S = –5 V, VG2S = VDS = 0 VG2S = –5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz V |
|
|
|
Hitachi Semiconductor |
GaAs Dual Gate MES FET • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain curr |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to sourc |
|
|
|
Hitachi Semiconductor |
UHF RF Amplifier • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 |
|
|
|
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit —————————————————————— – Drain to source voltage VDS 12 V —————————————————————— – Gate 1 to source voltag |
|