| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SK2800 www.DataSheet4U.com • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Max |
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Hitachi Semiconductor |
N-Channel MOSFET • Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Dra |
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Hitachi Semiconductor |
2SK2885 • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC –DC converter Avalanche ratings Outline TO –3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Ab |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source v |
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Hitachi |
2SK2828 • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC –DC converter • Avalanche ratings Outline TO –3P ADE-208-514 C (Z) 4th. Edition Feb 1999 D 2 1 G 1 2 33 S 1. Gate 2. |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
N-Channel MOSFET • Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2851 Absolute Maximum Ratings (Ta = 25°C) Item D |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source v |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source v |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25 |
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