Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK2851 |
Click to view a larger image
| Part Number | 2SK2851 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features • Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large... |
| Features |
• Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2851 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I ... |
| Document |
 2SK2851 Data Sheet
PDF 50.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2850 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | 2SK2850-01 |
Fuji Electric |
N-Channel MOSFET |
|
| 3 | 2SK2854 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK2855 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SK2856 |
Toshiba Semiconductor |
N-Channel MOSFET |
|