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2SK2885 |
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| Part Number | 2SK2885 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switchin... |
| Features |
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A A W °C °C ... |
| Document |
 2SK2885 Data Sheet
PDF 38.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2880 |
Isahaya Electronics |
N-Channel MOSFET |
|
| 2 | 2SK2881 |
Isahaya Electronics |
N-Channel Transistor |
|
| 3 | 2SK2882 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2883 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2884 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|