| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain D |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain D |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain D |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|
|
|
|
Greatpower |
POWER FIELD EFFECT TRANSISTOR This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switc |
|