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GPT02N60 |
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| Part Number | GPT02N60 |
| Manufacturer | Greatpower |
| Description | FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fas... |
| Features |
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN S... |
| Document |
 GPT02N60 Data Sheet
PDF 364.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GPT02N60A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 2 | GPT02N65 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 3 | GPT02N65A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | GPT02N50 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | GPT02N50A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
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