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GPT04N65 |
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| Part Number | GPT04N65 |
| Manufacturer | Greatpower |
| Description | GPT04N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also ... |
| Features |
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP Top View
TO-251 Front View
TO-252 Front View
D
GATE DRAIN SOURCE
GATE DR... |
| Document |
 GPT04N65 Data Sheet
PDF 1.37MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GPT04N60 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 2 | GPT04N60A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 3 | GPT04N70 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | GPT01N65A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | GPT02N50 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |
|