GeneSiC GA5 fiche technique

No.	Partie #	Fabricant	Description
1	GA50JT06-CAL	GeneSiC	OFF Silicon Carbide Junction Transistor
2	GA50SICP12-227	GeneSiC	Silicon Carbide Junction Transistor/Schottky Diode Co-pack  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low g
3	GA50JT17-CAL	GeneSiC	Junction Transistor  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  S
4	GA50JT17-247	GeneSiC	Junction Transistor  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  S
5	GA50JT12-CAL	GeneSiC	Junction Transistor  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  S
6	GA50JT12-247	GeneSiC	Normally - OFF Silicon Carbide Junction Transistor  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  S
7	GA50JT06-258	GeneSiC	Junction Transistor  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Compatible with 5 V TTL Gate Drive  Temperature Independent Switching Performance  Low Output Capacitance  Positive T