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GA50SICP12-227 |
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| Part Number | GA50SICP12-227 |
| Manufacturer | GeneSiC |
| Description | Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated S... |
| Features |
175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC Schottky Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low gate charge Package RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 mΩ Advantages Low switching losses High circuit efficiency High temperature operation High short circuit withstand capability Reduced cooling requirements Reduced system size SOT-227 Applications Down Hole Oil Drilling... |
| Document |
 GA50SICP12-227 Data Sheet
PDF 240.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GA500TD60U |
International Rectifier |
HALF-BRIDGE IGBT DUAL INT-A-PAK |
|
| 2 | GA50JT06-258 |
GeneSiC |
Junction Transistor |
|
| 3 | GA50JT06-CAL |
GeneSiC |
OFF Silicon Carbide Junction Transistor |
|
| 4 | GA50JT12-247 |
GeneSiC |
Normally - OFF Silicon Carbide Junction Transistor |
|
| 5 | GA50JT12-CAL |
GeneSiC |
Junction Transistor |
|