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GA50JT12-CAL |
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| Part Number | GA50JT12-CAL |
| Manufacturer | GeneSiC |
| Description | Die Datasheet GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features 210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excelle... |
| Features |
210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode VDS = 1200 V RDS(ON) = 20 mΩ ID @ 25 oC = 100 A hFE = 85 Die Size = 4.35 mm x 4.35 mm Advantages Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Ampl... |
| Document |
 GA50JT12-CAL Data Sheet
PDF 1.99MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GA50JT12-247 |
GeneSiC |
Normally - OFF Silicon Carbide Junction Transistor |
|
| 2 | GA50JT17-247 |
GeneSiC |
Junction Transistor |
|
| 3 | GA50JT17-CAL |
GeneSiC |
Junction Transistor |
|
| 4 | GA50JT06-258 |
GeneSiC |
Junction Transistor |
|
| 5 | GA50JT06-CAL |
GeneSiC |
OFF Silicon Carbide Junction Transistor |
|