No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
PNP Transistor Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. MSL 3 APPLICATIONS Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Mark |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
PNP Epitaxial Silicon Transistor Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A Complements the 2SC2562. Pb Lead-free High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies |
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GME |
Silicon NPN Transistor Complementary to KTC4374 Pb Lead-free Production specification 2SA1662 ORDERING INFORMATION Type No. Marking 2SA1662 FO/FY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Colle |
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GME |
PNP General Purpose Transistor Excellent hFE linearity. Complementary NPN type available (2SC4617). MSL 1 APPLICATIONS Epitaxial planar type. PNP silicon transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1774 FQ/FR/FS 2SA1774 SOT-523 Package Code S |
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GME |
PNP Silicon Transistor Power dissipation.(PC=200mW) Excellent HFE Linearity. Complements the 2SC4081. Pb Lead-free 2SA1576A APPLICATIONS General purpose application. Switching and amplification. ORDERING INFORMATION Type No. Marking 2SA1576A FQ/FR/FS SOT |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg |
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GME |
Plastic-Encapsulate Transistors High voltage and high current. Excellent hFE linearity. High hFE. Complementary to 2sc4738. Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT |
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GME |
Silicon Epitaxial Planar Transistor Excellent hFE linearity. Commplementary to 2SC2712. High voltage and high current. Low noise. Pb Lead-free 2SA1162 APPLICATIONS General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code |
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GME |
Silicon Epitaxial Planar Transistor z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current. z Low noise. z Collector-Emitter voltage BVCEO=-50V. APPLICATIONS z Low frequency , low noise amplifier. Production specification 2SA1015 SOT-2 |
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GME |
PNP Silicon Transistor High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611 APPLICATIONS Audio frequency general purpose amplifier applications. ORDERING I |
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GME |
PNP Silicon Transistor High voltage and high current. Excellent HFE Linearity. High hFE linearity. Complementary to 2SC4116. Pb Lead-free Production specification 2SA1586 APPLICATIONS Audio frequency general purpose amplifier applications. ORDERING INFORMATIO |
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GME |
PNP Silicon Transistor Power dissipation.(PC=200mW) Excellent HFE Linearity. Pb Lead-free Production specification 2SA1579 APPLICATIONS General purpose application. ORDERING INFORMATION Type No. Marking 2SA1579 RP/ RR/RS SOT-323 Package Code SOT-323 MAXIMUM |
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GME |
PNP Epitaxial Planar Silicon Transistor z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value |
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