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2SA1700 |
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| Part Number | 2SA1700 |
| Manufacturer | GME |
| Description | PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXI... |
| Features |
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Production specification
2SA1700
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Volage Collector-Emitter Voltage
-400 -400
V V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-200
mA
ICP Collector Power Dissipation
-400
mA
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)005 Rev.A
www.gmicroelec.com 1
PNP Epitaxial Pla... |
| Document |
 2SA1700 Data Sheet
PDF 176.49KB |
| Distributor | Stock | Price | Buy |
|---|
