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2SA1162 |
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| Part Number | 2SA1162 |
| Manufacturer | GME |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. Commplementary to 2SC2712. High voltage and high current. Low noise. Pb Lead-free 2SA1162 AP... |
| Features |
Excellent hFE linearity. Commplementary to 2SC2712. High voltage and high current. Low noise. Pb Lead-free 2SA1162 APPLICATIONS General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA... |
| Document |
 2SA1162 Data Sheet
PDF 280.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1160 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | 2SA1160 |
TRANSYS Electronics Limited |
Plastic-Encapsulated Transistors |
|
| 3 | 2SA1160 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1160 |
JCET |
PNP Transistor |
|
| 5 | 2SA1162 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|