No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting external capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) 2.3V to 4.8V (Typ.) 0.1V steps High accu |
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ROHM |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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ETCTI |
CMOS 24-STAGE FREQUENCY DIVIDER |
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Inchange Semiconductor |
2SD458 fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A VBE(sat) Base-Emitter Saturatio |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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Intersil Corporation |
CMOS Dual 64-Stage Static Shift Register • High-Voltage Types (20-Volt Rating) • Low Quiescent Current - 10nA/pkg (Typ.) at VDD = 5V • Clock Frequency 12MHz (Typ.) at VDD = 10V • Schmitt Trigger Clock Inputs Allow Operation with Very Slow Clock Rise and Fall Times • Capable of Driving Two L |
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ROHM |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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Inchange Semiconductor |
Silicon PNP Power Transistors n to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 hFE1 DC Current Gain IC= 2A; VCE= 5V hFE2 |
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Microsemi Corporation |
(CD45xx) 6.4 VOLT ZENER VOLTAGE 0°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 t |
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Microsemi Corporation |
(CD45xx) 6.4 VOLT ZENER VOLTAGE 0°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 t |
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Microsemi Corporation |
(CD45xx) 6.4 VOLT ZENER VOLTAGE 0°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 t |
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SYC |
HEX SCHMITT TRIGGER 00°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting external capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) 2.3V to 4.8V (Typ.) 0.1V steps High accu |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting external capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) 2.3V to 4.8V (Typ.) 0.1V steps High accu |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting external capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) 2.3V to 4.8V (Typ.) 0.1V steps High accu |
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Rohm |
VOLTAGE DETECTOR 1) Built-in delay time circuit 2) No external capacitor for setting delay time required 3) 3 kinds of delay time: 50msec(Typ.)(BD45XX5G,BD46XX5G) 100msec(Typ.)(BD45XX1G,BD46XX1G) 200msec(Typ.)(BD45XX2G,BD46XX2G) 4) Detection voltage: 2.3V ~ 4.8V 0.1V |
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