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GE 6EA DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IS67WVE1M16EALL

ISSI
16Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 6
Datasheet
2
P80FG6EAL

SHINDENGEN
Power MOSFET
SMD LowRON 4.5VGateDrive LowCapacitance ඼໊ུ߸ 5ZQF /P  ᶆ 80FG6EAL 000 000 ϩοτ؅ཧ൪߸ʢྫʣ -PU $POUSPM /P   ᶃᶄᶅ    ᶃ( ᶄ% ᶅ4 ᶆ% については Webサイトをごさい。については をごさい。 Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe m
Datasheet
3
IS67WVC2M16EALL

ISSI
32Mb Async/Page/Burst CellularRAM

⚫ Single device supports asynchronous , page, and burst operation
⚫ Mixed Mode supports asynchronous write and synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ
Datasheet
4
6EA8

GE
Triode-Pentode
Datasheet
5
R3131N16EA

RICOH
Low Voltage Detector
Datasheet
6
IS67WVC4M16EALL

ISSI
64Mb Async/Page/Burst CellularRAM

⚫ Single device supports asynchronous , page, and burst operation
⚫ Mixed Mode supports asynchronous write and synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ
Datasheet
7
IS66WVC2M16EALL

ISSI
32Mb Async/Page/Burst CellularRAM

⚫ Single device supports asynchronous , page, and burst operation
⚫ Mixed Mode supports asynchronous write and synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ
Datasheet
8
R3131N46EA

RICOH
Low Voltage Detector
Datasheet
9
R3131N26EA

RICOH
Low Voltage Detector
Datasheet
10
R3131N36EA

RICOH
Low Voltage Detector
Datasheet
11
IS67WVE4M16EALL

ISSI
64Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access :
Datasheet
12
IS67WVE2M16EALL

ISSI
32Mb Async/Page PSRAM

⚫ Asynchronous and page mode interface
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Page mode read access
 Interpage Read access : 6
Datasheet
13
P85FG6EAL

SHINDENGEN
Power MOSFET
SMD LowRON 4.5VGateDrive LowCapacitance ඼໊ུ߸ 5ZQF /P  ᶆ 85FG6EAL 000 000 ϩοτ؅ཧ൪߸ʢྫʣ -PU $POUSPM /P   ᶃᶄᶅ    ᶃ( ᶄ% ᶅ4 ᶆ% については Webサイトをごさい。については をごさい。 Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe m
Datasheet
14
IS66WVC4M16EALL

ISSI
64Mb Async/Page/Burst CellularRAM

⚫ Single device supports asynchronous , page, and burst operation
⚫ Mixed Mode supports asynchronous write and synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ
Datasheet
15
IS66WVE1M16EALL

ISSI
16Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 6
Datasheet
16
IS66WVE4M16EALL

ISSI
64Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access :
Datasheet
17
IS66WVE51216EALL

ISSI
8Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 6
Datasheet
18
IS67WVE51216EALL

ISSI
8Mb Async/Page PSRAM

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 6
Datasheet
19
IS66WVE2M16EALL

ISSI
32Mb Async/Page PSRAM

⚫ Asynchronous and page mode interface
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Page mode read access
 Interpage Read access : 6
Datasheet



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