IS66WVC4M16EALL |
Part Number | IS66WVC4M16EALL |
Manufacturer | ISSI |
Description | CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organize... |
Features |
⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns ⚫ Burst mode for Read and Write operation 4, 8, 16,32 or Continuous ⚫ Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 20mA Burst operation < 35 mA (@104Mhz) Standby < 180 uA (max.) Deep power-down (DPD) < 3u... |
Document |
IS66WVC4M16EALL Data Sheet
PDF 1.84MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS66WVC4M16ECLL |
ISSI |
64Mb Async/Page/Burst CellularRAM | |
2 | IS66WVC4M16ALL |
ISSI |
64Mb Async/Page/Burst CellularRAM | |
3 | IS66WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM | |
4 | IS66WVC2M16ALL |
ISSI |
32Mb Async/Page/Burst CellularRAM | |
5 | IS66WVC2M16EALL |
ISSI |
32Mb Async/Page/Burst CellularRAM |