IS66WVE2M16EALL |
Part Number | IS66WVE2M16EALL |
Manufacturer | ISSI |
Description | PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include ... |
Features |
⚫ Asynchronous and page mode interface ⚫ Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Page mode read access Interpage Read access : 60ns, 70ns Intrapage Read access : 25ns ⚫ Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 23mA Standby < 180 µA (max.) Deep power-down (DPD) ALL/CLL: < 3µA (Typ) BLL: < 10µA (Typ) ⚫ Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode ⚫ Operating temperature Rang... |
Document |
IS66WVE2M16EALL Data Sheet
PDF 703.49KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS66WVE2M16EBLL |
ISSI |
32Mb Async/Page PSRAM | |
2 | IS66WVE2M16ECLL |
ISSI |
32Mb Async/Page PSRAM | |
3 | IS66WVE2M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
4 | IS66WVE2M16BLL |
ISSI |
3.0V Core Async/Page PSRAM | |
5 | IS66WVE2M16DALL |
ISSI |
1.8V Core Async/Page PSRAM |