| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Schottky Barrier Rectifier • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VR |
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Fairchild Semiconductor |
Dual P-Channel Specified PowerTrench MOSFET • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted A |
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Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise note |
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