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Y2010DN |
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| Part Number | Y2010DN |
| Manufacturer | Fairchild Semiconductor |
| Description | FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protectio... |
| Features |
• Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol Parameter RθJC Maximum Thermal Resistance, Junction to ... |
| Document |
 Y2010DN Data Sheet
PDF 274.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Y2002KC250 |
IXYS |
Pulse Thyristor |
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| 2 | Y200CKC250 |
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Pulse Thyristor |
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| 3 | Y27US08121M |
Hynix Semiconductor |
HY27US08121M |
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